Patent number: 6784074

Defect-free semiconductor templates for epitaxial growth and method of making same

Original Assignee: NSC-Nanosemiconductor GmbH

Field of technology: Semiconductors/MEMS

Patent granted on: Tue, 31 Aug 2004

Patent drawing


A method for fabrication of defect-free epitaxial layers on top of a surface of a first defect-containing solid state material includes the steps of selective deposition of a second material, having a high temperature stability, on defect-free regions of the first solid state material, followed by subsequent evaporation of the regions in the vicinity of the defects, and subsequent overgrowth by a third material forming a defect-free layer.