Patent No. 4,812,888

Suspended Gate Field Effect Semiconductor Pressure Transducer Device

Issued: March 14, 1989

Inventor: Gary Blackburn, Ithaca, NY

Assignee: Cornell Research Foundation, Ithaca, NY

A capacitive pressure transducer comprising: field effect solid state electronic device having a semiconductor gate area, an insulating layer and a gate element; the gate element being made of conducting material and being constructed to move in response to pressure differentials on the two sides thereof so as to function as a diaphragm; the gate element being hermetically sealed along its perimeter with the said insulating layer; the gate element also being a conductor so as to change the capacitance between the said gate element and the semiconductor of said field effect solid state device and cause any change in the output of said solid state electronic device to be a measure of the change of the pressure; and a method of making the suspended diaphragm and gate element.

Go Back for more representative patents.

Home || Intellectual Property || Patents || Trademarks || Copyrights

Brown & Michaels, PC
400 M & T Bank Building
118 North Tioga Street - The Commons
Ithaca, NY 14850
Phone: (607) 256-2000 Fax: (607) 273-2609

- last updated 12-Apr-02

© Copyright 2002 Brown & Michaels, PC