Laser pumping of thyristors for fast high current rise-times
Patent No. 8,461,620
Issued: June 11, 2013
Inventors: Glidden; Steven C. (Dryden, NY), Sanders; Howard D. (Batavia,
An optically triggered semiconductor switch includes an anode metallization layer; a cathode metallization layer; a semiconductor between the anode metallization layer and the cathode metallization layer and a photon source. The semiconductor includes at least four layers of alternating doping in the form P-N-P-N, in which an outer layer adjacent to the anode metallization layer forms an anode and an outer layer adjacent the cathode metallization layer forms a cathode and in which the anode metallization layer has a window pattern of optically transparent material exposing the anode layer to light. The photon source emits light having a wavelength, with the light from the photon source being configured to match the window pattern of the anode metallization layer.
Reference to Related Applications
This application claims one or more inventions which were disclosed in Provisional Application No. 61/347,126 filed May 21, 2010, entitled "Laser Pumping of 5 kV Silicon Thyristors for Fast High Current Rise-Times". The benefit under 35 USC .sctn.119(e) of the United States provisional application is hereby claimed, and the aforementioned application is hereby incorporated herein by reference.
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