Patent number: 8411711

Semiconductor laser with low relative intensity noise of individual longitudinal modes and optical transmission system incorporating the laser

Original Assignee: Innolume GmbH

Field of technology: Electronics, Optics, Semiconductors/MEMS

Patent granted on: Tue, 02 Apr 2013

Patent drawing

Abstract

A semiconductor laser comprises an electrically isolated active section and at least one noise reducing section and operates on a ground state transition of a quantum dot array having inhomogeneous broadening greater than 10 nm. The laser preferably emits more than 10 optical modes such that a total relative intensity noise of each optical mode is less than 0.2% in the 0.001 GHz to 10 GHz range. The spectral power density is preferably higher than 2 mW/nm. An optical transmission system and a method of operating a quantum dot laser with low relative intensity noise of each optical mode are also disclosed.