Double-sided monolithically integrated optoelectronic module with temperature compensation

Patent No. 8,309,461

Issued: November 13, 2012
Filed: July 24, 2009

Inventors: Krestnikov; Igor (Dortmund, DE), Kurb; Juergen (Neuchatel, CH), Kovsh; Alexey (Dortmund, DE), Zhukov; Alexey (St. Petersburg, RU), Livshits; Daniil (Dortmund, DE), Mikhrin; Sergey (Dortmund, DE)
Assignee: Innolume GmbH (Dortmund, DE)

An optoelectronic module includes a semiconductor structure with a substrate having a first side and a second side, a first layered structure deposited on the first side, and a second layered structure deposited on the second side. The optoelectronic module also includes driver circuitry fabricated of the first layered structure and a diode laser fabricated of the second layered structure. The driver circuitry produces a drive electrical signal supplied to the diode laser, and the diode laser produces an optical output in response to the drive electrical signal. In a preferred embodiment, the optoelectronic module also includes a temperature-sensitive element fabricated of the first or the second layered structure. The temperature-sensitive element produces a temperature dependent control signal related to the diode laser temperature.

Reference to Related Applications

This is a divisional patent application of copending application Ser. No. 11/380,067, filed Apr. 25, 2006, entitled "DOUBLE-SIDED MONOLITHICALLY INTEGRATED OPTOELECTRONIC MODULE WITH TEMPERATURE COMPENSATION. The aforementioned application is hereby incorporated herein by reference.

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