Long-wavelength resonant-cavity light-emitting diode
Patent No. 8,148,186
Issued: April 3, 2012
Inventors: Kovsh; Alexey (Dortmund, DE), Krestnikov; Igor (Dortmund, DE),
Mikhrin; Sergey (Dortmund, DE), Livshits; Daniil (Dortmund, DE)
An efficient long-wavelength light-emitting diode has a resonant-cavity design. The light-emitting diode preferably has self-organized (In,Ga)As or (In,Ga)(As,N) quantum dots in the light-emitting active region, deposited on a GaAs substrate. The light-emitting diode is capable of emitting in a long-wavelength spectral range of preferably 1.15-1.35 µm. The light-emitting diode also has a high efficiency of preferably at least 6 mW and more preferably at least 8 mW at an operating current of less than 100 mA and a low operating voltage of preferably less than 3V. In addition, the light-emitting diode preferably has an intensity of maxima, other than the main maximum of the emission spectrum, of less than 1% of an intensity of the main maximum. This combination of parameters makes such a device useful as an inexpensive optical source for various applications.
Reference to Related Applications
This is a divisional patent application of copending application Ser. No. 11/864,059, filed Sep. 28, 2007 and now issued as US Patent 7,642,562, entitled "LONG-WAVELENGTH RESONANT-CAVITY LIGHT-EMITTING DIODE", which claimed one or more inventions which were disclosed in Provisional Application No. 60/827,515, filed Sep. 29, 2006, entitled "LONG-WAVELENGTH RESONANT-CAVITY LIGHT-EMITTING DIODE". The benefit under 35 USC .sctn.119(e) of the U.S. provisional application is hereby claimed, and the aforementioned applications are hereby incorporated herein by reference.
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