A semiconductor optoelectronic device includes at least one cavity and one multilayered interference reflector. The cavity is designed preferably to possess properties of an antiwaveguiding cavity, where no optical modes propagate in the lateral plane. The existing optical modes are the modes propagating in the vertical direction or in a direction tilted to the vertical direction at an angle smaller than the angle of the total internal reflection at the semiconductor/air interface. This design reduces the influence of parasitic optical modes and improves characteristics of optoelectronic devices including vertical cavity surface emitting lasers, tilted cavity lasers emitting through the top surface or the substrate, vertical or tilted cavity resonant photodetectors, vertical or tilted cavity resonant optical amplifiers, and light-emitting diodes.

Reference to Related Applications

This application claims an invention which was disclosed in Provisional Application No. 60/560,149, filed Apr. 7, 2004, entitled "OPTOELECTRONIC DEVICE BASED ON AN ANTIWAVEGUIDING CAVITY". The benefit under 35 USC .sctn.(119)(e) of the U.S. provisional application is hereby claimed, and the aforementioned application is hereby incorporated herein by reference.

The subject matter in this application is related to the subject matter disclosed in U.S. patent application Ser. No. 10/943,044, filed Sep. 16, 2004, entitled "TILTED CAVITY SEMICONDUCTOR OPTOELECTRONIC DEVICE AND METHOD OF MAKING SAME". The aforementioned application is hereby incorporated herein by reference.

Go Back for more representative patents.

Home || Intellectual Property || Patents || Trademarks || Copyrights

Brown & Michaels, PC
400 M & T Bank Building
118 North Tioga Street - The Commons
Ithaca, NY 14850
Phone: (607) 256-2000 · Fax: (607) 256-3628

e-mail: bpm@bpmlegal.com

© 2008 Brown & Michaels PC