Inventors: Shchukin; Vitaly (Berlin, DE); Ledentsov; Nikolai (Berlin, DE)
Assignee: NSC-Nanosemiconductor GmbH (Dortmund, DE)

Defect-free semiconductor templates for epitaxial growth and method of making same

Patent No. 6,784,074

Issued: August 31, 2004
Filed: June 6, 2003

This is a continuation-in-part of U.S. patent application Ser. No. 09/851,730, filed May 9, 2001 now U.S. Pat. No. 6,653,166, entitled "SEMICONDUCTOR DEVICE AND METHOD OF MAKING SAME". The aforementioned application is hereby incorporated herein by reference.

 


A method for fabrication of defect-free epitaxial layers on top of a surface of a first defect-containing solid state material includes the steps of selective deposition of a second material, having a high temperature stability, on defect-free regions of the first solid state material, followed by subsequent evaporation of the regions in the vicinity of the defects, and subsequent overgrowth by a third material forming a defect-free layer.


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