Inventors: Shchukin; Vitaly (Berlin, DE);
Ledentsov; Nikolai (Berlin, DE)
Defect-free semiconductor templates for epitaxial growth and method of making same
Patent No. 6,784,074
Issued: August 31, 2004
This is a continuation-in-part of U.S. patent application Ser. No. 09/851,730, filed May 9, 2001 now U.S. Pat. No. 6,653,166, entitled "SEMICONDUCTOR DEVICE AND METHOD OF MAKING SAME". The aforementioned application is hereby incorporated herein by reference.
A method for fabrication of defect-free epitaxial layers on top of a surface of a first defect-containing solid state material includes the steps of selective deposition of a second material, having a high temperature stability, on defect-free regions of the first solid state material, followed by subsequent evaporation of the regions in the vicinity of the defects, and subsequent overgrowth by a third material forming a defect-free layer.
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